 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch FEATURES 30V/40A,RDS(ON)= 10m@VGS=10V 30V/40A,RDS(ON)= 14m@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PIN CONFIGURATION TO-252 TO-251 PART MARKING 2007/07/20 Ver.2 Page 1 SPN8882 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPN8882T252R SPN8882T251T SPN8882T252RG : Tape Reel ; Pb - Free SPN8882T251RG : Tube ; Pb - Free Package TO-252 TO-251 Part Marking SPN8882 SPN8882 Symbol G S D Description Gate Source Drain ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Single Pulse Drain to Source Avalanche Energy - Starting (TJ=25C , VDD=27V , VGS=10V , IAS=28A , L=0.1mH ) TO-252-2L Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TO-251 TA=25 TA=100 Symbol VDSS VGSS ID IDM IS EAS PD TJ TSTG RJA Typical 30 20 60 40 100 50 41 40 55 150 -55/150 100 Unit V V A A A mJ W /W 2007/07/20 Ver.2 Page 2 SPN8882 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS = 0V , ID =250uA VGS(th) VDS = VGS,IDS =250uA VDS = 0V,VGS = 20 V VDS = 24V,VGS =0V IDSS VDS = 24V,VGS =0V, TJ = 125C VGS = 10V, ID = 35A RDS(on) VGS = 4.5V, ID = 35A gfs VDS = 15V, ID =20 A VSD IF = 40 A,VGS = 0V IGSS 30 0.8 2.4 100 1 100 0.008 0.012 10 1.0 1.5 0.010 0.014 V nA uA S V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS = 15V,VGS = 5V, ID =50 A 12 4 5 1500 320 200 8 20 nC VGS = 0V, VDS = 25V, F=1MHz pF 12 15 30 9 ns (VDD = 15 V,ID = 50 A, VGS=10V,RG = 2.5) 10 18 6 2007/07/20 Ver.2 Page 3 SPN8882 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/07/20 Ver.2 Page 4 SPN8882 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/07/20 Ver.2 Page 5 SPN8882 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/07/20 Ver.2 Page 6 SPN8882 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2007/07/20 Ver.2 Page 7 SPN8882 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2007/07/20 Ver.2 Page 8 SPN8882 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. (c)The SYNC Power logo is a registered trademark of SYNC Power Corporation (c)2004 SYNC Power Corporation - Printed in Taiwan - All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 (c)http://www.syncpower.com 2007/07/20 Ver.2 Page 9 |
Price & Availability of SPN8882T252R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |